Samsung announced that is has started mass production of the new 9th generation vertical NAND (V-NAND) memory chips. They have 50% higher bit density than 8th generation products.
Additionally, the 9th gen products support a new NAND flash interface called “Toggle 5.1” that enables data transfer speeds of up to 3.2Gbps, this is 33% higher than previous generations. To top it all off, the new chips are 10% more power efficient.
A lot of work went into the 9th generation of V-NAND. Samsung used new innovations like cell interference avoidance and cell life extension. Also, the company leveraged its advanced channel hole etching technology, which helps to maximize productivity at the factory.
The new faster, higher capacity V-NAND chips will be used in products like high-performance SSDs. Samsung plans to expand support for PCIe 5.0 to make use of all the extra speed.
Right now the company is mass producing 1Tb 9th gen V-NAND chips with triple-level cells (TLC). In the second half of this year it will also start making a quad-level cell (QLC) variant of these chips.